DocumentCode :
1279474
Title :
Tensile and compressive behaviour of silicon carbide nanocones with 120° disclination
Author :
Yanling Tian ; Ribo Wei ; Weiguo Gao ; Eichhorn, Volkmar ; Fatikow, Sergej ; Dawei Zhang
Author_Institution :
Sch. of Mech. Eng., Tianjin Univ., Tianjin, China
Volume :
7
Issue :
8
fYear :
2012
fDate :
8/1/2012 12:00:00 AM
Firstpage :
798
Lastpage :
801
Abstract :
The tensile and compressive behaviour of silicon carbide nanocones (SiCNCs) under axial strain has been investigated using classic molecular dynamics simulations. For the tensile behaviour, the influences of the cone height on the failure strain, and failure force as well as failure strain energy have been systematically explored. Both the failure strain and the strain energy of SiCNCs are found to decrease with the increasing cone height. However, the failure force is marginally affected by the cone height. For the compressive behaviour of the SiCNCs, the deformation patterns in the buckling and postbuckling stages are extensively examined. The influences of the cone height on compressive behaviour have been explored. It is noted that the increased cone height has significant effect on the critical strain, and critical force as well as critical strain energy per atom of SiCNCs.
Keywords :
buckling; molecular dynamics method; nanostructured materials; silicon compounds; wide band gap semiconductors; SiC; axial strain; compressive behaviour; cone height; critical force; critical strain energy; deformation patterns; disclination; failure force; failure strain energy; molecular dynamics simulations; postbuckling stage; silicon carbide nanocone atom; tensile behaviour;
fLanguage :
English
Journal_Title :
Micro & Nano Letters, IET
Publisher :
iet
ISSN :
1750-0443
Type :
jour
DOI :
10.1049/mnl.2012.0353
Filename :
6294609
Link To Document :
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