Title :
Characterization issues of gate geometry in multifinger structure for RF-SOI MOSFETs
Author :
Lee, Hyeokjae ; Lee, Jong-Ho ; Park, Young June ; Min, Hong Shick
Author_Institution :
CMOS Device Design, Chartered Semicond. Manuf., Singapore
fDate :
5/1/2002 12:00:00 AM
Abstract :
In this letter, we propose that f/sub T/ and f/sub max/ properties in partially depleted SOI devices were analyzed in terms of gate electrode layout, body instability, and body resistance of multifinger structure. The speed characteristics were a strong function of the number of fingers and gate types such as T-gate and H-gate structures and were evaluated by g/sub m/ variation (/spl Delta/g/sub m/), extra parasitic capacitance (/spl Delta/C/sub gs/), and ac body instability.
Keywords :
MOSFET; UHF field effect transistors; UHF measurement; capacitance; characteristics measurement; semiconductor device measurement; silicon-on-insulator; H-gate; RF-SOI MOSFETs; Si; T-gate; ac body instability; body instability; body resistance; characterization issues; gate electrode layout; gate geometry; multifinger structure; parasitic capacitance; partially depleted SOI devices; speed characteristics; CMOS technology; Cutoff frequency; Electrodes; Fingers; Geometry; Immune system; MOSFETs; Noise figure; Radio frequency; Testing;
Journal_Title :
Electron Device Letters, IEEE
