Title :
Six-terminal MOSFET´s: modeling and applications in highly linear, electronically tunable resistors
Author :
Vavelidis, Kostas ; Tsividis, Yannis P. ; Eynde, Frank Op´t ; Papananos, Yannis
Author_Institution :
Div. of Comput. Sci., Nat. Tech. Univ. of Athens, Greece
fDate :
1/1/1997 12:00:00 AM
Abstract :
The electrical properties of a six-terminal MOSFET are studied and a strong-inversion model is derived. Due to its special structure, the six-terminal MOSFET can be operated as a highly-linear, electronically-tunable resistor. This is managed by applying proper voltages at the terminals of the structure, achieving channel uniformity independent of applied signals. Measurements on fabricated test devices yield distortion levels of -90 dB for 1 Vp-p signals
Keywords :
BiCMOS analogue integrated circuits; MOSFET; circuit tuning; electric distortion; resistors; semiconductor device models; 1 V; BiCMOS analogue ICs; channel uniformity; distortion levels; electronically tunable resistors; fabricated test devices; six-terminal MOSFETs; strong-inversion model; Computer science; Distortion measurement; FETs; Helium; Linearization techniques; MOSFET circuits; Nonlinear filters; Resistors; Semiconductor process modeling; Testing; Tunable circuits and devices; Voltage;
Journal_Title :
Solid-State Circuits, IEEE Journal of
