Title :
1/f noise in homogeneous and inhomogeneous media
Author :
Vandamme, L.K.J. ; Trefán, Gy
Author_Institution :
Dept. of Electr. Eng., Eindhoven Univ. of Technol., Netherlands
fDate :
2/1/2002 12:00:00 AM
Abstract :
Some experimental techniques for low-frequency resistance noise measurements are discussed. The criterion for using a low-noise current amplifier instead of voltage amplifier is given. A distinction is made between contact and bulk resistance contributions to the observed I If noise. The merits and difficulties of the application of the empirical relation for the 1/f noise in homogeneous and inhomogeneous media are addressed. The criterion that 1/f noise in homogeneous samples can only be detected for a number of free carriers N < 1014 is calculated. The authors explain why the enhanced 1/f noise, due to poor crystal quality, current crowding at contacts or at grain boundaries, and at inhomogeneous internal interfaces can be used as a diagnostic tool for quality and reliability assessment of electronic devices
Keywords :
1/f noise; current density; current fluctuations; electric noise measurement; impurity scattering; inhomogeneous media; resistors; semiconductor device noise; 1/f noise; bulk resistance contributions; conductance fluctuations; contact current crowding; contact resistance contributions; corner frequency; current fluctuations; empirical relation; enhanced noise; four-point measurements; grain boundary current crowding; homogeneous media; homogeneous resistors; inhomogeneous media; internal interfaces; low-frequency resistance noise measurements; low-noise current amplifier; poor crystal quality; quality assessment; reliability assessment; sensitivity coefficient; two-point measurements; voltage fluctuations;
Journal_Title :
Circuits, Devices and Systems, IEE Proceedings -
DOI :
10.1049/ip-cds:20020329
