DocumentCode :
127972
Title :
A balanced CMOS OpAmp with high EMI immunity
Author :
Subrahmanyam, Boyapati ; Das, Divya ; Baghini, Maryam Shojaei ; Redoute, Jean-Michel
Author_Institution :
IITB-Monash Res. Acad., Indian Inst. of Technol. Bombay, Mumbai, India
fYear :
2014
fDate :
1-4 Sept. 2014
Firstpage :
703
Lastpage :
708
Abstract :
In this paper a balanced CMOS operational amplifier which has higher electromagnetic interference (EMI) immunity compared to a double differential amplifier and standard Miller operational amplifier, has been introduced. The proposed amplifier has better EMI immunity, from 1 MHz - 1 GHz, by keeping specifications such as gain, -3 dB bandwidth, phase margin, power supply rejection and unity gain frequency same as in the Miller operational amplifier. Analysis and simulation results are compared when an EMI signal of 1.1 Vpp applied at the input terminal. The simulation results show that the EMI-induced offset voltage is lesser over a wide range of frequencies for the proposed amplifier.
Keywords :
CMOS integrated circuits; differential amplifiers; electromagnetic interference; operational amplifiers; EMI immunity; Miller operational amplifier; balanced CMOS operational amplifiers; double differential amplifier; electromagnetic interference; frequency 1 MHz to 1 GHz; phase margin; power supply rejection; unity gain frequency; CMOS integrated circuits; Capacitance; Differential amplifiers; Electromagnetic compatibility; Electromagnetic interference; Gain; Transistors; CMOS; electromagnetic interference immunity; operational amplifier;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electromagnetic Compatibility (EMC Europe), 2014 International Symposium on
Conference_Location :
Gothenburg
Type :
conf
DOI :
10.1109/EMCEurope.2014.6930995
Filename :
6930995
Link To Document :
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