Title :
An innovative modelization of loss mechanism in silicon integrated inductors
Author :
Arcioni, Paolo ; Castello, Rinaldo ; Perregrini, Luca ; Sacchi, Enrico ; Svelto, Francesco
Author_Institution :
Dipt. di Elettronica, Pavia Univ., Italy
fDate :
12/1/1999 12:00:00 AM
Abstract :
In this paper, we present an improved lumped-element equivalent circuit of silicon integrated inductors, which accurately takes into account parasitic effects and separately models the effect of metal and substrate losses. We describe an efficient procedure to deduce all the elements of the equivalent circuit from wideband, two-port measurements of the S-parameters of the inductor. The separate characterization of metal and substrate losses allows us to evaluate separately their contribution to the inductor´s Q-factor. We also report the results of the characterization of some CMOS and BiCMOS integrated inductors designed to be included in radio frequency integrated circuits operating at 1.8 GHz
Keywords :
BiCMOS integrated circuits; CMOS integrated circuits; Q-factor; S-parameters; UHF integrated circuits; elemental semiconductors; equivalent circuits; inductors; integrated circuit modelling; losses; lumped parameter networks; silicon; 1.8 GHz; BiCMOS IC; CMOS IC; Q-factor; S-parameters; Si; lumped element equivalent circuit model; metal losses; parasitic effects; radio frequency integrated circuit; silicon integrated inductor; substrate losses; wideband two-port measurement; BiCMOS integrated circuits; CMOS technology; Conductivity; Equivalent circuits; Gallium arsenide; Inductors; Integrated circuit technology; Radio frequency; Radiofrequency integrated circuits; Silicon;
Journal_Title :
Circuits and Systems II: Analog and Digital Signal Processing, IEEE Transactions on
