InGaN-GaN multiquantum-well blue and green light-emitting diodes

Author

Chang, S.J. ; Lai, W.C. ; Su, Y.K. ; Chen, J.F. ; Liu, C.H. ; Liaw, U.H.

Author_Institution

Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan, Taiwan

Volume

8

Issue

2

fYear

2002

Firstpage

278

Lastpage

283

Abstract

InGaN-GaN multiquantum-well (MQW) blue and green light-emitting diodes (LEDs) were prepared by organometallic vapor phase epitaxy, and the properties of these LEDs were evaluated by photoluminescence (PL), double crystal X-ray diffraction, and electroluminescence (EL) measurements. It was found that there were only small shifts observed in PL and EL peak positions of the blue MQW LEDs when the number of quantum well (QW) increased. However, significant shifts in PL and EL peak positions were observed in green MQW LEDs when the number of QW increased. It was also found that there was a large blue shift in EL peak position under high current injection in blue MQW LEDs. However, the blue shift in green MQW LEDs was negligibly small when the injection current was large. These observations could all be attributed to the rapid relaxation in green MQW LEDs since the In composition ratio in the InGaN well was high for the green MQW LEDs. The forward voltage V_f of green MQW LEDs was also found to be larger than that of blue MQW LEDs due to the same reason

Keywords

III-V semiconductors; MOCVD; X-ray diffraction; electroluminescence; gallium compounds; indium compounds; light emitting diodes; photoluminescence; semiconductor quantum wells; spectral line shift; vapour phase epitaxial growth; EL peak positions; In composition ratio; InGaN well; InGaN-GaN; InGaN-GaN MQW LEDs; InGaN-GaN multiquantum-well light-emitting diodes; PL peak positions; blue MQW LEDs; blue shift; double crystal X-ray diffraction; electroluminescence; forward voltage; green MQW LEDs; injection current; organometallic vapor phase epitaxy; peak positions; photoluminescence; Epitaxial growth; Gallium nitride; Light emitting diodes; Nitrogen; Photoluminescence; Photonic band gap; Quantum well devices; Substrates; Temperature; X-ray diffraction;

fLanguage

English

Journal_Title

Selected Topics in Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

1077-260X

Type

jour

DOI

10.1109/2944.999181

Filename

999181