Title :
High-efficiency InGaN-GaN MQW green light-emitting diodes with CART and DBR structures
Author :
Chen, C.H. ; Chang, S.J. ; Su, Y.K. ; Chi, G.C. ; Sheu, J.K. ; Chen, J.F.
Author_Institution :
Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan, Taiwan
Abstract :
Distributed Bragg reflector (DBR) and charge asymmetric resonance tunneling (CART) structures were applied to nitride-based green light-emitting diodes (LEDs) to enhance their output efficiency It was found that we can reduce the forward voltage at 20 mA from 3.7 to 3.2 V with the inclusion of CART structure. It was also found that the electroluminescence peak wavelength of the CART LED is less sensitive to the amount of injection current. The output power and external quantum efficiency of the CART LED with DBR structure measured at 20 mA can reach 7.2 mW and 11.25%, respectively
Keywords :
III-V semiconductors; electroluminescence; gallium compounds; indium compounds; light emitting diodes; resonant tunnelling; semiconductor quantum wells; 11.25 percent; 20 mA; 3.7 to 3.2 V; 7.2 mW; CART LED; CART structures; DBR structure; DBR structures; InGaN-GaN; InGaN-GaN MQW green light-emitting diodes; LEDs; charge asymmetric resonance tunneling structures; distributed Bragg reflector structures; electroluminescence peak wavelength; external quantum efficiency; forward voltage; injection current; nitride-based green light-emitting diodes; output efficiency; output power; Distributed Bragg reflectors; Electroluminescence; Light emitting diodes; Power generation; Power measurement; Quantum well devices; Resonance; Tunneling; Voltage; Wavelength measurement;
Journal_Title :
Selected Topics in Quantum Electronics, IEEE Journal of
DOI :
10.1109/2944.999182
