DocumentCode
1280239
Title
Laser parameter extraction for tunable vertical cavity lasers
Author
Lin, Chien-chung ; Sugihwo, F. ; Harris, J.S.
Author_Institution
Solid State Electron. Lab., Stanford Univ., CA, USA
Volume
33
Issue
20
fYear
1997
fDate
9/25/1997 12:00:00 AM
Firstpage
1705
Lastpage
1707
Abstract
A novel technique for extraction of diode laser parameters is demonstrated. With tunable vertical cavity surface emitting lasers (VCSELs), the internal quantum efficiency, internal loss, average gain coefficient, and transparent current density can be extracted on the same device. This technique enables evaluation of critical elements and design of VCSEL structures
Keywords
laser tuning; laser variables measurement; semiconductor lasers; surface emitting lasers; diode laser; gain coefficient; internal loss; internal quantum efficiency; parameter extraction; transparent current density; tunable vertical cavity surface emitting laser;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19971150
Filename
629544
Link To Document