DocumentCode :
1280332
Title :
Self-aligned porous silicon optical waveguides
Author :
Arrand, H.F. ; Benson, T.M. ; Loni, A. ; Krueger, M.G. ; Thoenissen, M. ; Lueth, H.
Author_Institution :
Dept. of Electr. & Electron. Eng., Nottingham Univ., UK
Volume :
33
Issue :
20
fYear :
1997
fDate :
9/25/1997 12:00:00 AM
Firstpage :
1724
Lastpage :
1725
Abstract :
The authors report a new self-aligned method for the fabrication of porous silicon optical waveguides which is simple and avoids the typical processing problems associated with the chemically-reactive nature of the porous silicon internal surface. The method is compatible with high temperature oxidation, enabling waveguides operating between visible (633 nm) and infra-red (1.3 μm) to be fabricated
Keywords :
elemental semiconductors; optical fabrication; optical waveguides; oxidation; porous materials; silicon; 633 nm to 1.3 mum; Si; high temperature oxidation; optical waveguide fabrication; optical waveguides; porous materials; self-aligned method;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:19971144
Filename :
629558
Link To Document :
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