Title :
High-speed operation of resonant tunnelling flip-flop circuit employing MOBILE (monostable-bistable transition logic element)
Author :
Maezawa, K. ; Matsuzaki, H. ; Arai, K. ; Otsuji, T. ; Yamamoto, M.
Author_Institution :
NTT Syst. Electron. Labs., Kanagawa, Japan
fDate :
9/25/1997 12:00:00 AM
Abstract :
A new flip-flop circuit employing a monostable-bistable transition logic element is proposed which was fabricated with resonant tunnelling diodes/HEMT integration technology on an InP substrate. Error free operations up to 18 Gbit/s were demonstrated at room temperature
Keywords :
HEMT integrated circuits; field effect logic circuits; flip-flops; integrated logic circuits; resonant tunnelling diodes; sequential circuits; 18 Gbit/s; InP; MOBILE; error free operations; monostable-bistable transition logic element; resonant tunnelling diodes/HEMT integration; resonant tunnelling flip-flop circuit;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19971176
