• DocumentCode
    1280495
  • Title

    Photoluminescence from SiGe/Si quantum dots with wavelength in the visible range

  • Author

    Huang, F.Y. ; Tang, Y.S. ; Duan, J.N. ; Wang, K.L.

  • Author_Institution
    Dept. of Electr. Eng., California Univ., Los Angeles, CA, USA
  • Volume
    33
  • Issue
    20
  • fYear
    1997
  • fDate
    9/25/1997 12:00:00 AM
  • Firstpage
    1736
  • Lastpage
    1737
  • Abstract
    Photoluminescence from Si0.7Ge0.3/Si quantum dots with wavelength in the visible range is reported. The SiGe/Si quantum dots were fabricated by electron beam lithography and reactive ion etching of an SiGe/Si superlattice. A photoluminescence spectrum was obtained between 4.2 K and room temperature. As the temperature increased, the photoluminescence intensity decreased, with the peak position shifting slightly to a higher energy. The photoluminescence persisted up to room temperature with its intensity ~40% of that at 4.2 K
  • Keywords
    Ge-Si alloys; electron beam lithography; elemental semiconductors; photoluminescence; semiconductor epitaxial layers; semiconductor materials; semiconductor quantum dots; silicon; sputter etching; 4.2 to 293 K; SiGe-Si; electron beam lithography; luminescence intensity; photoluminescence; quantum dots; reactive ion etching;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19971171
  • Filename
    629566
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1280495