DocumentCode :
1280601
Title :
Elaboration of alumina nanowire field normal to a generic substrate
Author :
Buttard, Denis
Author_Institution :
CEA-Grenoble/INAC/SiNaPS-MINATEC, Grenoble, France
Volume :
6
Issue :
6
fYear :
2011
fDate :
6/1/2011 12:00:00 AM
Firstpage :
441
Lastpage :
443
Abstract :
Nanoporous alumina film was realised on a silicon substrate. The structure investigated by scanning electron microscopy is presented and reveals homogeneous pores on the entire sample surface. The pore-cell is polygonal and has sometimes a hexagonal shape. The pore-cell is limited by six-edges, leading to alumina nanowires brushes normal to the substrate after an enlargement of the pores. Owing to the geometry of the initial pore structure, the resulting nanowires have an exponential shape with a foot larger than the top, leading to good mechanical behaviour. The alumina annealing has also been investigated by grazing incidence X-ray diffraction measurements and reveals the presence of the γ-Al2O3 phase for a temperature upper than 800°C.
Keywords :
X-ray diffraction; alumina; annealing; nanowires; scanning electron microscopy; silicon; Al2O3; Si; alumina nanowire field; annealing; grazing incidence X-ray diffraction; nanoporous alumina film; pore structure; pore-cell; scanning electron microscopy; silicon substrate;
fLanguage :
English
Journal_Title :
Micro & Nano Letters, IET
Publisher :
iet
ISSN :
1750-0443
Type :
jour
DOI :
10.1049/mnl.2011.0179
Filename :
5960468
Link To Document :
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