Title :
Enhanced breakdown voltage in InP-HEMTs by using an In0.53 (AIxGa1-x)0.47As(x=0.1, 0.2) quaternary channel
Author :
Lai, Li-Shyue ; Chan, Yi-Jen
Author_Institution :
Dept. of Electr. Eng., Nat. Central Univ., Chung-Li, Taiwan
fDate :
9/25/1997 12:00:00 AM
Abstract :
An In0.53(AlxGa1-x)0.47AS quaternary channel has been introduced into n+-InAlAs/InGaAs HEMTs. By adding a small amount of Al to the InGaAs channel, the bandgap can be enhanced, which provides a higher reversed gate-drain breakdown voltage. In addition, the associated impact ionisation process can be suppressed in these quaternary channels. These HEMTs have been demonstrated with a very low output conductance (4 mS/mm for x=0.2) and a much smaller gate leakage current than conventional InP-HEMTs
Keywords :
III-V semiconductors; aluminium compounds; electric breakdown; gallium arsenide; high electron mobility transistors; indium compounds; leakage currents; microwave field effect transistors; HEMTs; InAlAs-In0.53(AlGa)0.47As-InP; InP; bandgap; enhanced breakdown voltage; gate leakage current; microwave FETs; output conductance; quaternary channel; reversed gate-drain breakdown voltage;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19971134
