• DocumentCode
    1280606
  • Title

    Enhanced breakdown voltage in InP-HEMTs by using an In0.53 (AIxGa1-x)0.47As(x=0.1, 0.2) quaternary channel

  • Author

    Lai, Li-Shyue ; Chan, Yi-Jen

  • Author_Institution
    Dept. of Electr. Eng., Nat. Central Univ., Chung-Li, Taiwan
  • Volume
    33
  • Issue
    20
  • fYear
    1997
  • fDate
    9/25/1997 12:00:00 AM
  • Firstpage
    1739
  • Lastpage
    1740
  • Abstract
    An In0.53(AlxGa1-x)0.47AS quaternary channel has been introduced into n+-InAlAs/InGaAs HEMTs. By adding a small amount of Al to the InGaAs channel, the bandgap can be enhanced, which provides a higher reversed gate-drain breakdown voltage. In addition, the associated impact ionisation process can be suppressed in these quaternary channels. These HEMTs have been demonstrated with a very low output conductance (4 mS/mm for x=0.2) and a much smaller gate leakage current than conventional InP-HEMTs
  • Keywords
    III-V semiconductors; aluminium compounds; electric breakdown; gallium arsenide; high electron mobility transistors; indium compounds; leakage currents; microwave field effect transistors; HEMTs; InAlAs-In0.53(AlGa)0.47As-InP; InP; bandgap; enhanced breakdown voltage; gate leakage current; microwave FETs; output conductance; quaternary channel; reversed gate-drain breakdown voltage;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19971134
  • Filename
    629568
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1280606