Synthesis of p-type ZnSe nanowires by atmosphere compensating technique

The atmosphere compensating technique with an individual selenium source is, first, used in the growth of phosphorus-doped p-type ZnSe nanowires. The morphology and structure characterisations reveal that the as-synthesised ZnSe nanowires have a wurtzite structure with a diameter of about 160 nm, a growth direction of [001]. The electrical properties characterisations demonstrate that the selenium atmosphere compensation technique assisted with phosphorus-doping leads to a substantial action in p-type conductivity of ZnSe nanowires with a high mobility of 1.25 cm² V^-1 S^-1 and carrier concentration of 1.47×10¹⁸ cm^-3. The photoluminescence measurements show a dominant emission and two donor-acceptor pair emission.