On the Frequency Response and Optimum Designs for Maximum Bandwidth of a Lateral Silicon Photodetector

Author

Das, Nikhil Ranjan ; Rakshit, Paulami

Author_Institution

Inst. of Radio Phys. & Electron., Univ. of Calcutta, Kolkata, India

Volume

29

Issue

19

fYear

2011

Firstpage

2913

Lastpage

2919

Abstract

In this paper, the photocurrent in a CMOS compatible Si photodetector is calculated considering the effect of diffusion of photogenerated carriers from the substrate region. The parasitic effects due to the multiple diodes in lateral configuration have also been considered in the analysis. Normalized frequency response is computed for a square-area photodetector. The results on the 3 dB bandwidth are shown as a function of number of diodes, finger width, finger spacing, and the photodetector length. It is shown that some optimum choices of the device parameters exist to obtain the bandwidth maxima of the lateral Si photodetector.

Keywords

CMOS integrated circuits; elemental semiconductors; optical design techniques; photoconductivity; photodetectors; photodiodes; silicon; CMOS compatible lateral silicon photodetector; Si; optimum design; photocurrent; photodiodes; photogenerated carriers; square-area photodetector; Bandwidth; Capacitance; Fingers; Photoconductivity; Photodetectors; Silicon; Substrates; Bandwidth; CMOS; Si-photodetector; frequency response; lateral p-i-n; optimum design; photocurrent;

fLanguage

English

Journal_Title

Lightwave Technology, Journal of

Publisher

ieee

ISSN

0733-8724

Type

jour

DOI

10.1109/JLT.2011.2162820

Filename

5960754