Title :
Interface-Dependent Spin-Reorientation Energy Barrier in Fe/MgO(001) Thin Film
Author :
Choi, Heechae ; Lee, Eung-Kwan ; Cho, Sung Beom ; Yoo, Dong Su ; Chung, Yong-Chae
Author_Institution :
Dept. of Mater. Sci. & Eng., Hanyang Univ., Seoul, South Korea
Abstract :
Using the density-functional-theory-based atomic modeling, the stable interface structure and the resultant magnetocrystalline anisotropy (MCA) of the Fe/MgO(001) for magnetic random access memory have been studied. The most stable surface structure of Fe/MgO(001) thin-film system was found to be either defect free or possessing oxygen vacancies in a c(2 ×1) periodicity. The formation of the oxygen vacancies in c(2 ×1) periodicity on MgO(001) surface reduced the MCA of Fe layer from 1.38 to 0.31 meV/atom. The reduced MCA is originated from the filling of the minority states of the Fe orbital below Fermi level.
Keywords :
Fermi level; MRAM devices; density functional theory; ferromagnetic materials; interface structure; iron; magnesium compounds; magnetic anisotropy; magnetic thin films; spin dynamics; surface structure; Fe-MgO; Fermi level; MCA; MgO; defect free; density-functional-theory-based atomic modeling; interface-dependent spin-reorientation energy barrier; magnetic random access memory; minority states; oxygen vacancy; periodicity; resultant magnetocrystalline anisotropy; stable interface structure; surface structure; thin film; thin-film system; Atomic layer deposition; Chemicals; Iron; Junctions; Magnetic tunneling; Magnetization; Tunneling magnetoresistance; Density functional theory; Fe/MgO(001); interface structure; perpendicular magnetic anisotropy;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2011.2160148
