Title :
A transimpedance CMOS multichannel amplifier with a 50 Ω-wide output range buffer for high counting rate applications
Author :
Haralabidis, N. ; Loukas, D. ; Misiakos, K. ; Katsafouros, S.
Author_Institution :
Inst. of Microelectron., Athens, Greece
fDate :
1/1/1997 12:00:00 AM
Abstract :
A fast transimpedance multichannel amplifier has been designed, fabricated in CMOS 1.2-μm technology and tested. Each channel consists of a current sensitive preamplifier followed by a voltage amplification stage and an on-chip buffer able to drive 50 Ω loads with an output range of ±800 mV. Measured peaking time at the output is 40 ns and the circuit recovers to baseline in 90 ns. This results in a counting capability of more than 107 hits/s, Signals of both polarities can be handled. The first two stages consume a total of 2 mW per channel and the 50 Ω buffer consumes another 17 mW. The equivalent noise charge (ENC) is 1100 e- rms with a slope of 40e-/pF. The IC is intended for use in gas and solid-state detectors with high particle rate and extensive charge release as in high energy calorimetry
Keywords :
CMOS analogue integrated circuits; buffer circuits; counting circuits; detector circuits; gas sensors; nuclear electronics; preamplifiers; pulse amplifiers; pulse height analysers; semiconductor counters; 1.2 micron; 40 ns; 50 ohm; 90 ns; calorimetry; current sensitive preamplifier; equivalent noise charge; gas detectors; high counting rate applications; output range buffer; particle rate; peaking time; solid-state detectors; transimpedance CMOS multichannel amplifier; voltage amplification stage; Broadband amplifiers; CMOS technology; Calorimetry; Circuit testing; Detectors; Feedback; Integrated circuit noise; Leak detection; Preamplifiers; Pulse amplifiers; Radiation detector circuits; Radiation detectors; Semiconductor optical amplifiers; Semiconductor radiation detectors; Solid state circuits; Time measurement; Voltage;
Journal_Title :
Solid-State Circuits, IEEE Journal of
