Title :
40 Gbit/s high voltage modulator driver in P-HEMT technology
Author :
Leich, M. ; Ludwig, M. ; Hulsmann, A. ; Hurm, V. ; Steinhagen, F. ; Thiede, A. ; Schlechtweg, M.
Author_Institution :
Fraunhofer-Inst. fur Angewandte Festkorperphys., Freiburg, Germany
fDate :
10/14/1999 12:00:00 AM
Abstract :
A high speed modulator driver has been developed and realised using GaAs P-HEMT technology. The driver is realised as a distributed amplifier and gives an output signal with a voltage swing of >5 V at a data rate of 40 Gbit/s
Keywords :
HEMT circuits; III-V semiconductors; distributed amplifiers; driver circuits; gallium arsenide; optical fibre networks; optical modulation; time division multiplexing; 40 Gbit/s; GaAs; P-HEMT technology; TDM; data rate; distributed amplifier; high speed modulator driver; optical fibre networks; output signal; voltage swing;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19991226
