Title :
Highly reliable operation at 80°C for 650 nm 5 mW AlGaInP LDs
Author :
Ohya, M. ; Doi, K. ; Fujii, H. ; Endo, K. ; Okuda, J. ; Anjiki, K.
Author_Institution :
ULSI Device Dev. Labs., NEC Corp, Shiga, Japan
fDate :
9/11/1997 12:00:00 AM
Abstract :
Highly reliable operation has been achieved for 650 nm band AlGaInP laser diodes (LDs) at 80°C for the first time. An LD with a multiquantum well active layer grown on a (115)A substrate produced a two-fold gain compared with an LD grown on a vicinal (001) substrate. The threshold current was 40 mA, and the maximum temperature for 5 mW operation was beyond 100°C. The median time before failure for 5 mW operation at 80°C was estimated to be 5000 h
Keywords :
III-V semiconductors; aluminium compounds; gallium compounds; indium compounds; laser transitions; quantum well lasers; semiconductor device reliability; (115)A substrate; 40 mA; 5 mW; 5000 hr; 650 nm; 80 C; AlGaInP; AlGaInP LDs; MQW active layer; highly reliable operation; laser diodes; multiquantum well; semiconductor lasers;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19971100
