Title :
High peak power (1.1 W) (Al)GaAs quantum cascade laser emitting at 9.7 μm
Author :
Page, H. ; Kruck, P. ; Barbieri, S. ; Sirtori, C. ; Stellmacher, M. ; Nagle, J.
Author_Institution :
Lab. Central de Recherches, Thomson-CSF, Orsay, France
fDate :
10/14/1999 12:00:00 AM
Abstract :
A unipolar quantum cascade laser operating at 9.7 μm and a temperature of 77 K based on the AlGaAs material system is reported. Collected peak output powers >1 W per facet are demonstrated, which it is believed have never been achieved before for quantum cascade lasers emitting at this wavelength. The maximum slope efficiency is 240 mW/A
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; laser transitions; quantum well lasers; (Al)GaAs quantum cascade laser; 1.1 W; 77 K; 9.7 micron; AlGaAs; high peak power operation; semiconductor laser; unipolar quantum cascade laser;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19991268
