Title :
20000 h InGaAs quantum well lasers
Author :
Yellen, S.L. ; Waters, R.G. ; Chen, Y.C. ; Soltz, B.A. ; Fischer, S.E. ; Fekete, D. ; BALLANTYNE, I.M.
Author_Institution :
McDonnell Douglas Electron. Syst. Co., Elmsford, NY, USA
Abstract :
Strained-layer GRINSCH-SQW InGaAs lasers operating CW at 1.01 mu m have been CW life tested to over 20000 h while exhibiting an average degradation rate of 1.3% per kh. These uncoated lasers were life tested at 70 mW (per facet) in constant power mode at a heatsink temperature of 30 degrees C. In addition to their longevity, these lasers exhibited a resistance to sudden failure with an unscreened sample of fifteen lasers experiencing total survival to 10000 h.
Keywords :
III-V semiconductors; gallium arsenide; gradient index optics; indium compounds; life testing; semiconductor device testing; semiconductor junction lasers; 1.01 micron; 20000 h; 30 degC; 70 mW; CW life testing; CW operation; InGaAs quantum well laser; average degradation rate; constant power mode; graded index separate confinement heterostructure single quantum well; heatsink temperature; semiconductor quantum well; strained layer GRINSCH-SQW laser;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19901342
