Title :
Detailed calculation of vertical electric field in thin oxide MOSFETs
Author :
Gennai, S. ; Iannaccone, G.
Author_Institution :
Pisa Univ., Italy
fDate :
10/14/1999 12:00:00 AM
Abstract :
The authors have performed a detailed calculation of the vertical electric field in a MOSFET, taking into account polysilicon gate depletion, quantum-confinement effects in the channel, and the anisotropy of the effective mass. It is shown that thin oxides do not exhibit higher actual breakdown fields than thick oxides
Keywords :
MOSFET; dielectric thin films; effective mass; electric fields; semiconductor device breakdown; Si-SiO2; breakdown fields; channel quantum-confinement effects; effective mass anisotropy; polysilicon gate depletion; thin gate oxide; thin oxide MOSFETs; vertical electric field;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19991253
