• DocumentCode
    1281319
  • Title

    Logic circuit elements using single-electron tunnelling transistors

  • Author

    Stone, N.J. ; Ahmed, H.

  • Author_Institution
    Cavendish Lab., Cambridge Univ., UK
  • Volume
    35
  • Issue
    21
  • fYear
    1999
  • fDate
    10/14/1999 12:00:00 AM
  • Firstpage
    1883
  • Lastpage
    1884
  • Abstract
    Logic elements have been demonstrated using single-electron tunnelling transistors. The transistors are biased at different positions in the conductance oscillation cycle so that they are analogous to either n-type or p-type transistors. The circuit operation is stable at a temperature of 1.6 K despite the low gain of the transistors
  • Keywords
    NAND circuits; circuit stability; integrated logic circuits; logic gates; single electron transistors; 1.6 K; biasing; conductance oscillation cycle; logic circuit elements; single-electron tunnelling transistors; stable circuit operation;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19991231
  • Filename
    810041