DocumentCode
1281319
Title
Logic circuit elements using single-electron tunnelling transistors
Author
Stone, N.J. ; Ahmed, H.
Author_Institution
Cavendish Lab., Cambridge Univ., UK
Volume
35
Issue
21
fYear
1999
fDate
10/14/1999 12:00:00 AM
Firstpage
1883
Lastpage
1884
Abstract
Logic elements have been demonstrated using single-electron tunnelling transistors. The transistors are biased at different positions in the conductance oscillation cycle so that they are analogous to either n-type or p-type transistors. The circuit operation is stable at a temperature of 1.6 K despite the low gain of the transistors
Keywords
NAND circuits; circuit stability; integrated logic circuits; logic gates; single electron transistors; 1.6 K; biasing; conductance oscillation cycle; logic circuit elements; single-electron tunnelling transistors; stable circuit operation;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19991231
Filename
810041
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