Title :
AlInGaAs/AlGaAs strained-layer 850 nm vertical-cavity lasers with very low thresholds
Author :
Ko, J. ; Hegblom, E.R. ; Akulova, Y. ; Margalit, N.M. ; Coldren, L.A.
Author_Institution :
Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA, USA
fDate :
8/28/1997 12:00:00 AM
Abstract :
The authors report a low CW, RT threshold current (Ith) of 156-μA from a 2.8 μm diameter vertical-cavity laser (VCL) with three AlInGaAs quantum wells. Devices show no degradation after 30 h of burn-in testing at a constant current density of 22 kA/cm2 and a junction temperature of 140°C. In addition, devices were measured at various stage temperatures and it was found that the lowest Ith, 110 μA for the 2.8 μm diameter VCL, occurs near 230 K, where the quantum well gain peak and the cavity mode are aligned
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; laser cavity resonators; laser transitions; quantum well lasers; surface emitting lasers; 110 to 156 muA; 140 C; 2.8 micron; 230 K; 850 nm; AlInGaAs quantum wells; AlInGaAs-AlGaAs; VCSEL; burn-in testing; low thresholds; semiconductor lasers; strained-layer vertical-cavity lasers; vertical cavity SEL;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19971037
