Title :
Pulsed operation lasing in a cleaved-facet InGaN/GaN MQW SCH laser grown on 6H-SiC
Author :
Bulman, G.E. ; Doverspike, K. ; Sheppard, S.T. ; Weeks, T.W. ; Kong, H.S. ; Dieringer, H.M. ; Edmond, J.A. ; Brown, J.D. ; Swindell, J.T. ; Schetzina, J.F.
Author_Institution :
Cree Res. Inc., Durham, NC, USA
fDate :
8/28/1997 12:00:00 AM
Abstract :
Room temperature pulsed-operation lasing has been achieved for the first time in an InGaN laser grown on a 6H-SiC substrate. The laser structure is an 8-well InGaN/GaN MQW having Al0.06Ga0.94 N waveguide and Al0.13Ga0.87N cladding layers. The index-guided laser having uncoated cleaved facets emits at 402 nm with a threshold current Ith of 1.2 A (42 V), corresponding to a current density of 48 kA/cm2. A narrow line width of 0.8 Å is observed at 1.09 Ith. Far field measurement indicate that the devices operate in the TEM01 mode with FWHP of 5.7 and 19° for the in-plane and perpendicular directions, respectively
Keywords :
III-V semiconductors; gallium compounds; indium compounds; laser cavity resonators; laser transitions; quantum well lasers; silicon compounds; spectral line breadth; substrates; waveguide lasers; 1.2 A; 402 nm; 42 V; 6H-SiC substrate; Al0.06Ga0.94N; Al0.06Ga0.94N waveguide; Al0.13Ga0.87N; Al0.13Ga0.87N cladding layers; InGaN-GaN; SiC; TEM01 mode; cleaved-facet MQW SCH laser; index-guided laser; pulsed-operation lasing; room temperature operation; semiconductor laser;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19971025
