Title :
Amorphous carbon films as planarization layers deposited by plasma-enhanced chemical vapor deposition
Author :
Pang, Stella W. ; Horn, M.W.
Author_Institution :
MIT Lincoln Lab., Lexington, MA, USA
Abstract :
A dry planarization process utilizing plasma-enhanced chemical vapor deposition (PECVD) of amorphous carbon (a-C:H) films has been developed. The degree of planarization obtained for these films is better than that of many conventional spun-on polymers. Carbon films 2.5 mu m thick have been shown to planarize 1.5- mu m-deep, 400- mu m-wide trenches to within 0.2 mu m. The deposition process can be carried out at room temperature with low ion bombardment energy (10 V) and fast deposition rate (300 nm/min). The planarization layers have been used in conjunction with both wet and dry deposited inorganic imaging layers in bilayer resist schemes to form submicrometer patterns.<>
Keywords :
carbon; chemical vapour deposition; semiconductor technology; 10 V; 2.5 micron; 5 nm/s; PECVD; amorphous C:H films; bilayer resist schemes; degree of planarization; deposition process; dry planarization process; fast deposition rate; low ion bombardment energy; planarization layers; plasma-enhanced chemical vapor deposition; submicrometer patterns; Amorphous materials; Chemical vapor deposition; Electrodes; Gases; Planarization; Plasma chemistry; Plasma temperature; Polymer films; Radio frequency; Surfaces;
Journal_Title :
Electron Device Letters, IEEE
