Title :
Random telegraph noise in GaN-based light-emitting diodes
Author :
Kang, Tae-June ; Park, Jongho ; Lee, Jae-Kyung ; Kim, Gracia ; Woo, Dong-Gyun ; Son, J.K. ; Lee, Joun-Ho ; Park, Byung-Gook ; Shin, Hae-Young
Author_Institution :
Inter-Univ. Semicond. Res. Center (ISRC), Seoul Nat. Univ., Seoul, South Korea
Abstract :
Random telegraph noise (RTN) having two discrete current levels was characterised in reverse current of GaN based light-emitting diodes. Through compared magnitude of the hysteresis with RTN amplitude in reverse current, it is confirmed that RTN causes the current-voltage (I-V) hysteresis. The mechanism of RTN was analysed by using a tunnelling equation. In addition, activation energy of the trap leading to RTN was characterised by analysis of the time constants with voltage and temperature.
Keywords :
gallium compounds; hysteresis; light emitting diodes; random noise; wide band gap semiconductors; GaN; current-voltage hysteresis; light-emitting diodes; random telegraph noise; reverse current; tunnelling equation;
Journal_Title :
Electronics Letters
DOI :
10.1049/el.2011.1439
