• DocumentCode
    1281696
  • Title

    Random telegraph noise in GaN-based light-emitting diodes

  • Author

    Kang, Tae-June ; Park, Jongho ; Lee, Jae-Kyung ; Kim, Gracia ; Woo, Dong-Gyun ; Son, J.K. ; Lee, Joun-Ho ; Park, Byung-Gook ; Shin, Hae-Young

  • Author_Institution
    Inter-Univ. Semicond. Res. Center (ISRC), Seoul Nat. Univ., Seoul, South Korea
  • Volume
    47
  • Issue
    15
  • fYear
    2011
  • Firstpage
    873
  • Lastpage
    875
  • Abstract
    Random telegraph noise (RTN) having two discrete current levels was characterised in reverse current of GaN based light-emitting diodes. Through compared magnitude of the hysteresis with RTN amplitude in reverse current, it is confirmed that RTN causes the current-voltage (I-V) hysteresis. The mechanism of RTN was analysed by using a tunnelling equation. In addition, activation energy of the trap leading to RTN was characterised by analysis of the time constants with voltage and temperature.
  • Keywords
    gallium compounds; hysteresis; light emitting diodes; random noise; wide band gap semiconductors; GaN; current-voltage hysteresis; light-emitting diodes; random telegraph noise; reverse current; tunnelling equation;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el.2011.1439
  • Filename
    5961147
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1281696