Title :
Simplified analytical method for predicting conversion gain of HEMT gate mixers
Author :
Allam, R. ; Dascalescu, L. ; Paillot, J.M. ; Duvanaud, C. ; Ribardiére, P.
Author_Institution :
Poitiers Univ., France
fDate :
10/28/1999 12:00:00 AM
Abstract :
The transconductance profile is the dominant factor in the frequency conversion process in a gate mixer configuration. Based on this property. A simplified analytical expression for the computation of the conversion gain has been developed. Good agreement is obtained between analytical computations and experimental data
Keywords :
HEMT circuits; millimetre wave frequency convertors; millimetre wave mixers; HEMT gate mixers; conversion gain; frequency conversion process; gate mixer configuration; transconductance profile;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19991313
