• DocumentCode
    1281749
  • Title

    A SPICE Compact Model of Metal Oxide Resistive Switching Memory With Variations

  • Author

    Guan, Ximeng ; Yu, Shimeng ; Wong, H. -S Philip

  • Author_Institution
    Dept. of Electr. Eng., Stanford Univ., Stanford, CA, USA
  • Volume
    33
  • Issue
    10
  • fYear
    2012
  • Firstpage
    1405
  • Lastpage
    1407
  • Abstract
    A SPICE compact model is developed for metal-oxide-based resistive random access memory (RRAM). The model includes the critical impact of temperature change and temporal variation. Using experimental data from HfOx-based RRAM, the model reproduces both the voltage-time relationship and the cycle-to-cycle variation in the RESET of the memory cells.
  • Keywords
    MOS memory circuits; SPICE; hafnium compounds; random-access storage; RESET; RRAM; SPICE compact model; cycle-to-cycle variation; memory cells; metal oxide resistive switching memory; metal-oxide-based resistive random access memory; temperature change; temporal variation; voltage-time relationship; Hafnium compounds; Heating; Integrated circuit modeling; Mathematical model; Resistance; SPICE; Switches; Compact model; resistive random access memory (RRAM) conducting filament; resistive switching; temperature; variation;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/LED.2012.2210856
  • Filename
    6296677
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1281749