Title :
Simulation of a lateral trench power MOSFET on InGaAs for improved performance
Author :
Payal, Mohit ; Singh, Yogang
Author_Institution :
Dept. of Electron. & Commun. Eng., G.B. Pant Eng. Coll., Pauri-Garhwal, India
Abstract :
In this paper, a lateral trench power metal oxide semiconductor field effect transistor (MOSFET) on InGaAs with voltage and on-resistance, we proposed a new power MOSFET the gate placed in a trench to provide conduction of drain to source current in the bulk of drift region. Another trench in the proposed structure is used to enhance reduced-surface-field (RESURF) effect in order to improve the breakdown voltage of the device. Two dimensional numerical simulations have been performed to analyse and compare the performance of the proposed device with the conventional lateral MOSFET. The proposed device exhibits 4.4 times higher breakdown voltage leading to 4 times improvement in the figure of merit as compare to conventional power MOSFET.
Keywords :
III-V semiconductors; electric breakdown; gallium arsenide; indium compounds; power MOSFET; wide band gap semiconductors; InGaAs; breakdown voltage improvement; drain current; drift region; figure of merit; lateral trench power MOSFET; lateral trench power metal oxide semiconductor field effect transistor; performance improvement; reduced-surface-field effect enhancement; source current; two dimensional numerical simulations; Electric breakdown; Electric fields; Indium gallium arsenide; Logic gates; MOSFET; Performance evaluation; Substrates; InGaAs; MOSFET; figure of merit; lateral; trench-gate;
Conference_Titel :
Engineering and Computational Sciences (RAECS), 2014 Recent Advances in
Conference_Location :
Chandigarh
Print_ISBN :
978-1-4799-2290-1
DOI :
10.1109/RAECS.2014.6799563
