Simulation of a lateral trench power MOSFET on InGaAs for improved performance

Author

Payal, Mohit ; Singh, Yogang

Author_Institution

Dept. of Electron. & Commun. Eng., G.B. Pant Eng. Coll., Pauri-Garhwal, India

fYear

2014

fDate

6-8 March 2014

Firstpage

1

Lastpage

3

Abstract

In this paper, a lateral trench power metal oxide semiconductor field effect transistor (MOSFET) on InGaAs with voltage and on-resistance, we proposed a new power MOSFET the gate placed in a trench to provide conduction of drain to source current in the bulk of drift region. Another trench in the proposed structure is used to enhance reduced-surface-field (RESURF) effect in order to improve the breakdown voltage of the device. Two dimensional numerical simulations have been performed to analyse and compare the performance of the proposed device with the conventional lateral MOSFET. The proposed device exhibits 4.4 times higher breakdown voltage leading to 4 times improvement in the figure of merit as compare to conventional power MOSFET.

Keywords

III-V semiconductors; electric breakdown; gallium arsenide; indium compounds; power MOSFET; wide band gap semiconductors; InGaAs; breakdown voltage improvement; drain current; drift region; figure of merit; lateral trench power MOSFET; lateral trench power metal oxide semiconductor field effect transistor; performance improvement; reduced-surface-field effect enhancement; source current; two dimensional numerical simulations; Electric breakdown; Electric fields; Indium gallium arsenide; Logic gates; MOSFET; Performance evaluation; Substrates; InGaAs; MOSFET; figure of merit; lateral; trench-gate;

fLanguage

English

Publisher

ieee

Conference_Titel

Engineering and Computational Sciences (RAECS), 2014 Recent Advances in

Conference_Location

Chandigarh

Print_ISBN

978-1-4799-2290-1

Type

conf

DOI

10.1109/RAECS.2014.6799563

Filename

6799563