• DocumentCode
    1281902
  • Title

    Thick SiO2 layer produced by anodisation

  • Author

    Haiyan, Ou ; Qinqing, Yang ; Hongbing, Lei ; Hongjie, Wang ; Qiming, Wang ; Xiongwei, Hu

  • Author_Institution
    Inst. of Semicond., Acad. Sinica, Beijing, China
  • Volume
    35
  • Issue
    22
  • fYear
    1999
  • fDate
    10/28/1999 12:00:00 AM
  • Firstpage
    1950
  • Lastpage
    1951
  • Abstract
    A method for oxidising porous silicon to obtain thick SiO2 as the cladding layer of silicon-based silica waveguides is presented. The experimental results of oxidation are given. The following conclusions are drawn: the oxidation rate of porous silicon is several orders higher than that of bulk silicon, the appropriate temperature variation rate during oxidation combined with proper porosity can prevent SiO2 on silicon substrates from cracking, and a 25 μm thick silicon dioxide layer has been obtained
  • Keywords
    anodisation; elemental semiconductors; integrated optics; oxidation; porous semiconductors; silicon; silicon compounds; 25 micron; SiO2-Si; anodisation; cladding layer; cracking; integrated waveguide devices; oxidation rate; porous material; temperature variation rate;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19991277
  • Filename
    811072
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1281902