Title :
High-performance 1.52 μm InAs/InP quantum dot distributed feedback laser
Author :
Lu, Z.G. ; Poole, P.J. ; Liu, J.R. ; Barrios, P.J. ; Jiao, Z.J. ; Pakulski, G. ; Poitras, D. ; Goodchild, D. ; Rioux, B. ; SpringThorpe, A.J.
Author_Institution :
Inst. for Microstruct. Sci., Nat. Res. Council Canada, Ottawa, ON, Canada
Abstract :
A high performance ridge-waveguide InAs/InP quantum dot distributed feedback laser around 1.52 μm with a cavity length of 1 mm and a stripe width of 3 μm is demonstrated. In continuous-wave operation singlemode output power was up to 18.5 mW and its sidemode suppression ratio was greater than 62 dB. The relative intensity noise was measured to be less than - 154dB/Hz from 10 MHz to 10 GHz, and the optical linewidth smaller than 150 kHz when the injection current was 200 mA at room temperature of 18°C.
Keywords :
III-V semiconductors; distributed feedback lasers; indium compounds; quantum dot lasers; InAs-InP; current 200 mA; frequency 10 MHz to 10 GHz; high-performance quantum dot distributed feedback laser; ridge-waveguide quantum dot distributed feedback laser; size 1 mm; size 3 mum; temperature 18 degC; wavelength 1.52 mum;
Journal_Title :
Electronics Letters
DOI :
10.1049/el.2011.0946
