Understanding wide-band MOS transistors

Author

Steininger, John M.

Author_Institution

AT&T Bell Lab., Reading, PA, USA

Volume

6

Issue

3

fYear

1990

fDate

5/1/1990 12:00:00 AM

Firstpage

26

Lastpage

31

Abstract

A quantitative understanding of MOS-transistor speed has been slow to emerge because of the absence of a commonly agreed-upon figure of merit for MOS-transistor speed and a lack of familiarity among designers with MOS-amplifier topologies. It is suggested that these problems can be addressed through the use of the unity-gain current frequency (f/sub T/) as a figure of merit for MOS transistors, the use of f/sub T/ in the prediction of amplifier bandwidth, and a wider familiarity among designers with practical examples of MOS wideband amplifiers. The use of f/sub T/ as a figure of merit is discussed, and the achievable amplifier bandwidths are determined. Increasing the f/sub T/ of an MOS device by making the g/sub m/ larger or the C/sub g/ smaller, or both, is discussed. Wideband CMOS amplifiers are considered.<>

Keywords

equivalent circuits; insulated gate field effect transistors; semiconductor device models; wideband amplifiers; CMOS amplifiers; MOS wideband amplifiers; MOS-transistor speed; amplifier bandwidth prediction; broadband type; figure of merit; unity-gain current frequency; wideband MOSFET; Bandwidth; Broadband amplifiers; CMOS process; CMOS technology; Capacitance; Circuit testing; Equivalent circuits; Frequency; MOSFETs; Wideband;

fLanguage

English

Journal_Title

Circuits and Devices Magazine, IEEE

Publisher

ieee

ISSN

8755-3996

Type

jour

DOI

10.1109/101.55332

Filename

55332