DocumentCode :
1282045
Title :
Enhanced surface emitting waveguides for visible, monolithic semiconductor laser sources
Author :
Normandin, R. ; Williams, R.L. ; Chatenoud, F.
Author_Institution :
Optoelectron. Devices, Ottawa, Ont., Canada
Volume :
26
Issue :
25
fYear :
1990
Firstpage :
2088
Lastpage :
2089
Abstract :
By using AlGaAs resonant multilayers embedded in a waveguide geometry a ten million fold enhancement for surface emitting harmonic generation over a normal GaAs film was obtained. The multilayer system alloys compensation for material losses at the harmonic and the use of thick films for efficient coupling of communication fibres to the device. The experimental results agree closely with theory and a monolithic implementation of visible, surface emitting solid state diode lasers is presented for InGaAs, InP and GaAs geometries.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; integrated optics; optical harmonic generation; optical waveguides; semiconductor junction lasers; AlGaAs resonant multilayers; GaAs; InGaAs; InP; compensation for material losses; coupling of communication fibres; experimental results; semiconductors; surface emitting harmonic generation; surface emitting lasers; surface emitting solid state diode lasers;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:19901345
Filename :
59613
Link To Document :
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