• DocumentCode
    1282054
  • Title

    Hybrid integrated differential photoreceiver comprising dual-PD and high-speed GaAs amplifier IC assembled on planar lightwave circuit platform

  • Author

    Ohyama, T. ; Yamada, T. ; Akahori, Y. ; Oguma, M. ; Sugita, A. ; Kato, K.

  • Author_Institution
    NTT Photonics Labs., Ibaraki, Japan
  • Volume
    35
  • Issue
    22
  • fYear
    1999
  • fDate
    10/28/1999 12:00:00 AM
  • Firstpage
    1971
  • Lastpage
    1973
  • Abstract
    A hybrid integrated differential photoreceiver has been successfully fabricated which comprises a dual photodiode (dual-PD) and a high-speed GaAs amplifier integrated circuit (IC) on a planar lightwave circuit (LC) platform with integrated metal-insulation-metal (MIM) structural capacitors by using a novel flip-chip bonding technique. The bandwidth of the photoreceiver is wide enough to receive a 12 Gbit/s Manchester-encoded optical signal
  • Keywords
    III-V semiconductors; differential amplifiers; flip-chip devices; gallium arsenide; high-speed integrated circuits; integrated optoelectronics; optical receivers; photodiodes; 12 Gbit/s; GaAs; Manchester encoded optical signal; bandwidth; dual photodiode; flip-chip bonding; high-speed GaAs amplifier integrated circuit; hybrid integrated differential photoreceiver; metal-insulator-metal capacitor; planar lightwave circuit;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19991294
  • Filename
    811101