DocumentCode :
1282184
Title :
Current division circuit implemented using CMOS technology
Author :
Taillefer, C. ; Wang, Chunyan ; Devos, F.
Author_Institution :
Dept. of Electr. & Comput. Eng., Concordia Univ., Montreal, Que., Canada
Volume :
35
Issue :
20
fYear :
1999
fDate :
9/30/1999 12:00:00 AM
Firstpage :
1697
Lastpage :
1698
Abstract :
A simple circuit is proposed for dividing one current by another. This circuit is composed of two MOS transistors, a voltage comparator, and two capacitors. The divider operates well at low currents. Using 1.5 μm single-poly CMOS technology, the proposed circuit occupies a silicon area of ~30 μm×40 μm
Keywords :
CMOS analogue integrated circuits; dividing circuits; low-power electronics; 1.5 micron; CMOS current division circuit; MOS transistors; single-poly CMOS technology; voltage comparator;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:19991160
Filename :
811125
Link To Document :
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