Free-Standing GaN-Based Photonic Crystal Band-Edge Laser

Author

Dong-Uk Kim ; Sunghwan Kim ; Jeongkug Lee ; Seong-Ran Jeon ; Heonsu Jeon

Author_Institution

Dept. of Phys. & Astron., Seoul Nat. Univ., Seoul, South Korea

Volume

23

Issue

20

fYear

2011

Firstpage

1454

Lastpage

1456

Abstract

We report the fabrication of a GaN-based membrane-type photonic crystal (PC) band-edge laser (BEL) that requires a smaller PC active area than previous designs due to strong field confinement. A honeycomb-lattice PC was designed such that the Γ₁ monopole band-edge mode fell within the emission band of InGaN quantum wells. The BEL exhibited pulsed lasing at room-temperature when optically pumped above its threshold pump energy density of ~ 15.5 mJ/cm². Based on polarization angle analysis, we confirmed that the BEL indeed lased at the Γ₁ monopole band-edge mode.

Keywords

III-V semiconductors; gallium compounds; indium compounds; laser modes; light polarisation; optical fabrication; optical pumping; photonic crystals; quantum well lasers; wide band gap semiconductors; GaN-InGaN; emission band; field confinement; free-standing photonic crystal band-edge laser; honeycomb-lattice; membrane-type band-edge laser; monopole band-edge mode; optical pumping; polarization angle analysis; quantum wells; temperature 293 K to 298 K; threshold pump energy density; Gallium nitride; Laser modes; Optical surface waves; Photonic crystals; Photonics; Vertical cavity surface emitting lasers; Band-edge laser; GaN; photonic crystals; semiconductor laser; surface emission;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/LPT.2011.2162944

Filename

5961608