Title :
An Inversion-Charge Analytical Model for Square Gate-All-Around MOSFETs
Author :
Pérez, Enrique Moreno ; Aranda, Juan Bautista Roldán ; Ruiz, Francisco J García ; Rosillo, Domingo Barrera ; Pérez, María José Ibáñez ; Godoy, Andrés ; Gámiz, Francisco
Author_Institution :
Dept. of Electron. & Comput. Technol., Univ. of Granada, Granada, Spain
Abstract :
A new approach to the analytical solution of the 2-D Poisson equation including the inversion-charge density in undoped square gate-all-around metal-oxide-semiconductor field-effect transistors has been developed. We have obtained functions with different degrees of complexity to calculate the electric potential in the devices under study. The results obtained are compared with the data simulated by solving the Poisson equation numerically. A good fit is achieved both for the electric potential and the inversion charge, which are calculated by means of Gauss´s law.
Keywords :
MOSFET; Poisson equation; semiconductor device models; 2D Poisson equation; Gauss law; inversion-charge analytical model; square gate-all-around MOSFET; square gate-all-around metal-oxide-semiconductor field-effect transistors; Data models; Electric potential; Logic gates; MOSFETs; Mathematical model; Poisson equations; Silicon; MOSFETs; semiconductor device modeling; silicon devices; thin film devices;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2011.2159222
