Author :
Sharma, Rupendra Kumar ; Gupta, Mridula ; Gupta, R.S.
Author_Institution :
Dept. of Electron. Sci., Univ. of Delhi, New Delhi, India
Abstract :
In this paper, the effect of various device design engineerings such as channel engineering, i.e., graded channel (GC), gate stack (GS) engineering (high-κ), and dual-material gate (DMG) on double-gate MOSFET (DG MOSFET) have been analyzed using ATLAS device simulator. Furthermore, the combinations of these technologies i.e., GC, along with GS engineering, i.e., GCGSDG, and GS together with DMG, i.e., GS dual-material DG (GSDMDG), have been taken into consideration. The simulation results demonstrate that, out of the several design engineerings, the GCGSDG is the most suitable for high-speed switching applications. However, the GSDMDG provides superior performance as an amplifier.
Keywords :
MOSFET; amplifiers; field effect transistor switches; nanoelectronics; technology CAD (electronics); ATLAS device simulator; GS dual-material double gate; TCAD assessment; amplifier; device design technology; double-gate MOSFET; gate stack; graded channel; high-speed switching application; nanoscale DG MOSFET performance enhancement; Doping; Logic gates; MOSFET circuits; Performance evaluation; Semiconductor process modeling; Threshold voltage; Transconductance; ATLAS device simulator; double-gate MOSFET (DG MOSFET); dual-material double gate (DMDG); gate-stack (GS) engineering; graded channel (GC);
