DocumentCode
1282312
Title
High-quality active inductors
Author
D´Angelo, G. ; Fanucci, L. ; Monorchio, A. ; Monterastelli, A. ; Neri, B.
Author_Institution
Dipt. di Ingegneria dell´´Inf., Pisa Univ., Italy
Volume
35
Issue
20
fYear
1999
fDate
9/30/1999 12:00:00 AM
Firstpage
1727
Lastpage
1728
Abstract
A high-quality active integrated inductor is presented. The circuit has an inductance of 20 nH and a quality factor of 47 at 1.8 GHz. It is designed to be realised using standard silicon bipolar technology and consumes 2.6 mW at a supply voltage of 3 V
Keywords
Q-factor; UHF integrated circuits; active networks; bipolar analogue integrated circuits; inductors; integrated circuit layout; 1.8 GHz; 2.6 mW; 3 V; Si; active integrated inductor; high-Q inductors; high-quality active inductors; quality factor; standard Si bipolar technology;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19991199
Filename
811146
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