Application of the floating-gate technique to the study of the n-MOSFET gate current evolution due to hot-carrier aging

Author

Marchetaux, J.C. ; Bourcerie, M. ; Boudou, Alain ; Vuillaume, D.

Author_Institution

BULL SA, Les Clayes-sous-Bois, France

Volume

11

Issue

9

fYear

1990

Firstpage

406

Lastpage

408

Abstract

The evolution of the gate current-voltage (I/sub g/-V/sub gs/) characteristics of n-MOSFETs induced by DC stresses at different gate voltage over drain voltage (V/sub ds/) ratios is studied by the floating-gate (FG) measurement technique. It is shown that the I/sub g/-V/sub gs/ curves are always lowered after aging, and that the kinetics are dependent on the aging conditions. A time power law is representative of the V/sub gs/=V/sub ds/ case. It is demonstrated that electron traps are created in the oxide by both hot-hole and hot-electron injection stresses. They are not present in the devices before aging. They can be easily charged and discharged by short electron and hole injections, respectively.<>

Keywords

ageing; hot carriers; insulated gate field effect transistors; DC stresses; aging conditions; drain voltage; electron traps; floating-gate technique; gate current voltage characteristics; gate voltage; hot hole injection stresses; hot-carrier aging; hot-electron injection stresses; n-MOSFET gate current evolution; oxide; time power law; Aging; Charge carrier processes; Electron traps; Hot carriers; Kinetic theory; MOSFET circuits; Measurement techniques; Secondary generated hot electron injection; Stress; Voltage;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.62971

Filename

62971