Title :
0.1 μm (Al0.5Ga0.5)0.5In0.5P/In 0.2Ga0.8As/GaAs PHEMT grown by gas source molecular beam epitaxy
Author :
Zaknoune, M. ; Schuler, O. ; Mollot, F. ; Théron, D. ; Crosnier, Y.
Author_Institution :
Inst. d´´Electron. et de Microelectron. du Nord, UMR-CNRS, Villeneuve d´´Ascq, France
fDate :
9/30/1999 12:00:00 AM
Abstract :
We have successfully realised a 0.1 μm T-gate pseudomorphic (Al 0.5Ca0.5)0.5In0.5P/In 0.2Ga0.8As/GaAs high electron mobility transistor (PM-HEMT) grown on a GaAs substrate by gas source molecular beam epitaxy (GSMBE). The electronic transfer and mobility of the (AlxGa 1-x)0.5In0.5P/In0.2Ga 0.8As structure as functions of the aluminium composition have been studied. The ohmic contact has also been optimised. For a single-side doped structure, the devices exhibit the best RF and DC performances of the AlGaInP/InGaAs system with a current density of 430 mA/ mm and an extrinsic transconductance Gm of 550 mS/mm. The cutoff frequencies have been determined to be Ft=100 GHz and Fmax=160 GHz at Vds=1.5 V. These excellent performances clearly show the high-quality material grown by GSMBE
Keywords :
III-V semiconductors; aluminium compounds; carrier mobility; chemical beam epitaxial growth; current density; gallium arsenide; gallium compounds; high electron mobility transistors; indium compounds; millimetre wave field effect transistors; semiconductor growth; 0.1 micron; 1.5 V; 100 GHz; 160 GHz; 550 mS/mm; Al composition; AlGaInP-InGaAs-GaAs; DC performance; GSMBE; GaAs; GaAs substrate; PM-HEMT; RF performance; T-gate PHEMT; current density; electronic transfer; extrinsic transconductance; gas source MBE; gas source molecular beam epitaxy; high electron mobility transistor; mobility; ohmic contact optimisation; pseudomorphic HEMT; single-side doped structure;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19991196
