Title :
Parasitic-Element Compensation Based on Factorization Method for Microwave Inverse Class-F/Class-F Amplifiers
Author :
Miura, Osamu ; Ishikawa, Ryo ; Honjo, Kazuhiko
Author_Institution :
Dept. of Commun. Eng. & Inf., Univ. of Electro-Commun., Chofu, Japan
Abstract :
A novel parasitic-element compensation design method with a combination of factorization and coefficient comparison for microwave inverse class-F/class-F amplifiers is proposed. This novel method is applicable to all circuit topologies, including L-C parallel and series resonance circuits, and ladder circuits with arbitrary order of the higher harmonic frequencies. The validity of the proposed method has been checked with a fabricated 1.9 GHz inverse class-F GaN-HEMT power amplifier, considering harmonic frequencies up to the fourth order. A drain efficiency of 77% and power added efficiency of 70% were obtained at 1.88 GHz.
Keywords :
high electron mobility transistors; microwave amplifiers; power amplifiers; GaN; L-C parallel resonance circuits; circuit topologies; coefficient comparison; factorization method; frequency 1.88 GHz; frequency 1.9 GHz; inverse class-F GaN-HEMT power amplifier; ladder circuits; microwave inverse class-F/class-F amplifiers; parasitic-element compensation design method; series resonance circuits; Gallium nitride; HEMTs; Harmonic analysis; Impedance; Microwave circuits; RLC circuits; Amplifier; class-F; inverse class-F; microwave; parasitic compensation;
Journal_Title :
Microwave and Wireless Components Letters, IEEE
DOI :
10.1109/LMWC.2012.2215844
