Flip-chip bonded 0.85-μm bottom-emitting vertical-cavity laser array on an AlGaAs substrate

Author

Ohiso, Y. ; Tateno, K. ; Kohama, Y. ; Wakatsuki, A. ; Tsunetsugu, H. ; Kurokawa, T.

Author_Institution

NTT Opto-Electron. Labs., Kanagawa, Japan

Volume

8

Issue

9

fYear

1996

Firstpage

1115

Lastpage

1117

Abstract

We report high-performance 0.85-μm bottom-emitting vertical-cavity surface-emitting lasers (VCSELs) on an AlGaAs substrate with 2.1 mA threshold current density 4.2 mW maximum output power, 11.7% power conversion efficiency and a maximum operating temperature of 130/spl deg/C. We also demonstrate a flip-chip bonded 0.85-μm bottom-emitting VCSEL array, and confirm all pixels across the 8×8 VCSEL array operate at a f₃ dB bandwidth of 2.6 GHz at only 4.2 mA.

Keywords

III-V semiconductors; aluminium compounds; current density; flip-chip devices; gallium arsenide; laser cavity resonators; laser transitions; semiconductor laser arrays; substrates; surface emitting lasers; /spl mu/m bottom-emitting vertical-cavity laser array; 0.85 mum; 11.7 percent; 130 C; 2.1 mA; 2.6 GHz; 4.2 mW; AlGaAs; AlGaAs substrate; flip-chip bonded; high-performance; mW maximum output power; maximum operating temperature; pixels; power conversion efficiency; threshold current density; Bandwidth; Bonding; Optical arrays; Power conversion; Power generation; Power lasers; Surface emitting lasers; Temperature; Threshold current; Vertical cavity surface emitting lasers;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.531807

Filename

531807