DocumentCode
128295
Title
Zero-current transition interleaved boost dc/dc converter
Author
Chien-Ming Wang ; Chang-Hua Lin ; Han-Ching Kuo ; Chien-Iu Lin
Author_Institution
Dept. of Electr. Eng., Nat. Ilan Univ., I-Lan, Taiwan
fYear
2014
fDate
9-11 June 2014
Firstpage
278
Lastpage
281
Abstract
A zero-current transition (ZCT) pulse-width-modulation (PWM) interleaved boost dc/dc converter using a ZCT-PWM auxiliary circuit is presented in this paper. All semiconductor devices in the proposed interleaved boost converter operate at ZCS turn on and turn off. Besides operating at constant frequency and reducing commutation losses, the proposed converter has no additional current and voltage stress, and conduction loss in the main switch compared with the hard switching converter counterpart. The proposed interleaved boost dc/dc converter is suitable for high-power application using insulated gate bipolar transistor (IGBT´s). The principle of operation, theoretical analysis, and experimental results of the proposed interleaved boost dc/dc converter, rated 1kW and operating at 40 kHz, are provided in this paper to verify the performance of converters.
Keywords
DC-DC power convertors; PWM power convertors; commutation; insulated gate bipolar transistors; zero current switching; IGBT; ZCT-PWM auxiliary circuit; commutation losses; conduction loss; current stress; frequency 40 kHz; hard switching converter; insulated gate bipolar transistor; interleaved boost DC-DC converter; power 1 kW; pulse-width-modulation; voltage stress; zero-current transition; Capacitors; Inductors; Insulated gate bipolar transistors; Pulse width modulation; Semiconductor diodes; Switches; Zero current switching;
fLanguage
English
Publisher
ieee
Conference_Titel
Industrial Electronics and Applications (ICIEA), 2014 IEEE 9th Conference on
Conference_Location
Hangzhou
Print_ISBN
978-1-4799-4316-6
Type
conf
DOI
10.1109/ICIEA.2014.6931173
Filename
6931173
Link To Document