Stability of sulfur-passivated facets of InGaAs-AlGaAs laser diodes

Author

Beister, G. ; Maege, J. ; Sebastian, J. ; Erbert, G. ; Weixelbaum, L. ; Weyers, M. ; Würfl, J. ; Daga, O.P.

Author_Institution

Ferdinand-Brann-Inst. fur Hochstfrequenztech., Berlin, Germany

Volume

8

Issue

9

fYear

1996

Firstpage

1124

Lastpage

1126

Abstract

The facets of GaAs-AlGaAs ridge waveguide (RW) laser diodes were passivated using (NH/sub 4/)/sub 2/S/sub x/. The effectiveness of this procedure was checked by electroluminescence power-voltage-current (P-V-I) measurements that provide information on the changes in the density of surface states. Using this nondestructive method, the degradation of the passivation under ambient atmosphere has been studied. Capping with silicon nitride is found to stabilize the sulfur passivation and avoid degradation.

Keywords

III-V semiconductors; aluminium compounds; electroluminescence; gallium arsenide; indium compounds; laser stability; laser variables measurement; passivation; ridge waveguides; semiconductor lasers; waveguide lasers; GaAs-AlGaAs; InGaAs-AlGaAs; InGaAs-AlGaAs laser diodes; ambient atmosphere; density of surface states; electroluminescence power-voltage-current measurements; nondestructive method; passivated; ridge waveguide; silicon nitride; sulfur-passivated facets; Atmosphere; Atmospheric measurements; Bars; Degradation; Diode lasers; Laser stability; Optical surface waves; Optical waveguides; Passivation; Silicon compounds;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.531810

Filename

531810