Title :
Low-Temperature Wafer Bonding Based on Gold-Induced Crystallization of Amorphous Silicon
Author :
Jing, Errong ; Xiong, Bin ; Wang, Yuelin
Author_Institution :
State Key Lab. of Transducer Technol., Chinese Acad. of Sci., Shanghai, China
Abstract :
Low-temperature wafer bonding based on gold-induced crystallization of amorphous silicon has been investigated for the first time in this letter. A bonding yield of 97% and a shear strength of 10.5 MPa were achieved when bonding the oxide wafers by the bonding method at 400°C applying 0.8-MPa pressure for 30 min. The microstructure analysis indicated that the gold-induced crystallization process leads to big Si grains extending across the bonding interface and Au filling the other regions of the bonding interface, which result to a strong and void-free bonding interface. More importantly, this bonding method can be used for other substrate materials.
Keywords :
amorphous semiconductors; crystallisation; gold; wafer bonding; amorphous silicon; bonding interface; gold-induced crystallization process; low-temperature wafer bonding; microstructure analysis; pressure 0.8 MPa; substrate materials; temperature 400 degC; time 30 min; Amorphous silicon; Bonding; Crystallization; Gold; Microelectronics; Micromechanical devices; Microstructure; Microwave integrated circuits; Packaging; Wafer bonding; Wafer scale integration; Bonding strength; gold-induced crystallization; microstructure analysis; wafer bonding;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2010.2055532
