High On/Off-Current Ratio in Bottom-Gated Microcrystalline-Silicon Thin-Film Transistors With Vertical-Offset Structure

Author

Toyota, Yoshiaki ; Matsumura, Mieko ; Suzumura, Isao ; Kaitoh, Takuo ; Gotoh, Jun ; Ohkura, Makoto

Author_Institution

Central Res. Lab., Hitachi, Ltd., Tokyo, Japan

Volume

31

Issue

9

fYear

2010

Firstpage

975

Lastpage

977

Abstract

The high on/off-current ratio of microcrystalline-silicon thin-film transistors (TFTs) with vertical offset was demonstrated. These TFTs have a bottom-gate structure and offset regions formed along the side surfaces of the thick interlayer films. Due to a decrease of maximum electric-field intensity and a narrow distribution of high electric field, the on/off current ratio of vertical-offset TFTs is about three orders of magnitude higher than that of conventional TFTs.

Keywords

elemental semiconductors; silicon; thin film transistors; Si; bottom-gated microcrystalline thin-film transistors; high on-off-current ratio; maximum electric-field intensity; thick interlayer films; vertical-offset structure; Crystallization; Displays; Electrodes; Electron mobility; Fabrication; Laminates; Leakage current; Logic gates; Plasma temperature; Silicon; Silicon compounds; Thin film devices; Thin film transistors; Bottom gate; Poole–Frenkel (PF); microcrystalline silicon $(muhbox{c-Si})$ ; off current; on/off-current ratio; vertical offset;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2010.2055533

Filename

5535109