• DocumentCode
    1283126
  • Title

    GaInAsSb/GaSb pn photodiodes for detection to 2.4 mu m

  • Author

    Tournie, E. ; Villemain, E. ; Joullie, A. ; Gouskov, L. ; Karim, Medles ; Salesse, I.

  • Author_Institution
    Montpellier II Univ., Sci. et Technol. du Languedoc, France
  • Volume
    27
  • Issue
    14
  • fYear
    1991
  • fDate
    7/4/1991 12:00:00 AM
  • Firstpage
    1237
  • Lastpage
    1239
  • Abstract
    Ga0.77In0.23As0.20Sb0.80/GaSb pn heterojunction photodiodes have been prepared by liquid phase epitaxy. They exhibit a long-wavelength threshold of 2.4 mu m. The room-temperature dark current at V=-0.5 V is 3 mu A (10 mA/cm2) and the external quantum efficiency is around 40% in the wavelength range 1.75-2.25 mu m. The estimated detectivity D* at 2.2 mu m is 8.8*109 cm Hz12/ W-1.
  • Keywords
    III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; infrared detectors; liquid phase epitaxial growth; photodiodes; semiconductor epitaxial layers; semiconductor junctions; 1.5 to 2.4 micron; 3 muA; 40 percent; GaInAsSb-GaSb; IR photodiodes; detectivity; external quantum efficiency; heterojunction photodiodes; liquid phase epitaxy; long-wavelength threshold; mid infrared; p-n photodiodes; pn photodiodes; room-temperature dark current; wavelength range;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19910776
  • Filename
    81162
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1283126